Design Optimization of NEMS Switches for Suspended-Gate Single-Electron Transistor Applications

The operation of nanoelectromechanical switches is investigated through simulation. A simple methodology based on a 1-D lumped model taking account of the Casimir effect is first proposed to determine a low-voltage actuation window for conventional cantilevers. Results show good agreement with 3-D simulation and prove to be helpful for systematic design. The conventional cantilever shape is then optimized to a cross-like design that is fully studied in a 3-D environment. Static and dynamic behaviors as well as effect of the oxide layer thickness are investigated with a view to suspended-gate single-electron transistor applications. The proposed structure successfully combines low actuation voltage and low power consumption, and it is shown that the switching speed is the limiting factor for the considered applications.

[1]  M. Parameswaran,et al.  Theoretical limits on the freestanding length of cantilevers produced by surface micromachining technology , 2002 .

[2]  Jaap Hoekstra,et al.  Circuit architecture solution for background charge fluctuations in single electron tunneling transistors , 2001 .

[3]  Gabriel M. Rebeiz,et al.  Nonlinear electro-mechanical modeling of MEMS switches , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[4]  M. P. Boer,et al.  Mechanics of microcantilever beams subject to combined electrostatic and adhesive forces , 2002 .

[5]  B. Camarota,et al.  Approaching the Quantum Limit of a Nanomechanical Resonator , 2004, Science.

[6]  Robert H. Blick,et al.  Silicon nanopillars for mechanical single-electron transport , 2004 .

[7]  K. Banerjee,et al.  SETMOS: a novel true hybrid SET-CMOS high current Coulomb blockade oscillation cell for future nano-scale analog ICs , 2003, IEEE International Electron Devices Meeting 2003.

[8]  Christoph Wasshuber.  Recent advances and future prospects in single-electronics , 2003, Proceedings 2003. Design Automation Conference (IEEE Cat. No.03CH37451).

[9]  R. Howe,et al.  Critical Review: Adhesion in surface micromechanical structures , 1997 .

[10]  A. Cleland,et al.  Nanometre-scale displacement sensing using a single electron transistor , 2003, Nature.

[11]  B. Pruvost,et al.  3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs , 2007, IEEE Transactions on Nanotechnology.

[12]  R. Howe,et al.  Design Considerations for Complementary Nanoelectromechanical Logic Gates , 2007, 2007 IEEE International Electron Devices Meeting.

[13]  T. Veijola,et al.  Equivalent-circuit model of the squeezed gas film in a silicon accelerometer , 1995 .

[14]  W. Lin,et al.  Casimir effect on the pull-in parameters of nanometer switches , 2005 .

[15]  F. Capasso,et al.  Quantum Mechanical Actuation of Microelectromechanical Systems by the Casimir Force , 2001, Science.