Electromagnetic Interference and Ionizing Radiation Effects on CMOS Devices

Integrated circuits are inherently complicated and made more by increasing transistor quantity and density. This trend potentially enhances concomitant effects of high-energy ionizing radiation and local or impressed electromagnetic interference (EMI). The reduced margin for signal error may counter any gain in radiation hardness from smaller device dimensions. Isolated EMI and ionizing radiation studies on circuits have been extensively conducted over the past 30 years. However, little focus has been placed on the combined effects. To investigate the effect of combined EMI and ionizing radiation, two complementary metal-oxide-semiconductor inverter technologies (CD4069 and SN74AUC1G04) were analyzed for their static performance in response to both EMI and gamma radiation up to 132 krd(Si). The combined EMI and gamma radiation environment, compared to the isolated effects of each, produced the most severe degradation in inverter performance for both device technologies.

[1]  Todd M Firestone.  RF Induced Nonlinear Effects in High-Speed Electronics , 2004 .

[2]  J.L. ter Haseborg,et al.  Susceptibility of some electronic equipment to HPEM threats , 2004, IEEE Transactions on Electromagnetic Compatibility.

[3]  Kenneth C. Smith,et al.  Microelectronic circuits, 2nd ed. , 1987 .

[4]  W.A. Radasky,et al.  Introduction to the special issue on high-power electromagnetics (HPEM) and intentional electromagnetic interference (IEMI) , 2004, IEEE Transactions on Electromagnetic Compatibility.

[5]  W. Fowler,et al.  The Physics of SiO2 and its Interfaces : S. T. Pantelides (Editor), Pergamon, 1978, 488 pp., U.S. $38.50. , 1981 .

[6]  Kyechong Kim,et al.  Impact of Microwave Interference on Dynamic Operation and Power Dissipation of CMOS Inverters , 2007, IEEE Transactions on Electromagnetic Compatibility.

[7]  D. Kenneally,et al.  RF upset susceptibilities of CMOS and low power Schottky D-type flip-flops , 1989, National Symposium on Electromagnetic Compatibility.

[8]  M.G. Backstrom,et al.  Susceptibility of electronic systems to high-power microwaves: summary of test experience , 2004, IEEE Transactions on Electromagnetic Compatibility.

[9]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[10]  D. Pozar.  Microwave Engineering , 1990 .

[11]  Kyechong Kim,et al.  Critical Upsets of CMOS Inverters in Static Operation Due to High-Power Microwave Interference , 2007, IEEE Transactions on Electromagnetic Compatibility.

[12]  H. E. Boesch.  Interface-State Generation in Thick SiO2 Layers , 1982, IEEE Transactions on Nuclear Science.

[13]  Andrew Holmes-Siedle,et al.  Handbook of Radiation Effects , 1993 .

[14]  Daniel M. Fleetwood,et al.  Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices , 1991 .

[15]  H.J. Barnaby,et al.  Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.

[16]  R. Richardson,et al.  Microwave Interference Effect in Bipolar Transistors , 1975, IEEE Transactions on Electromagnetic Compatibility.

[17]  J. Maimon,et al.  A scaleable, radiation hardened shallow trench isolation , 1999 .

[18]  R. Richardson.  Modeling of Low-Level Rectification RFI in Bipolar Circuitry , 1979, IEEE Transactions on Electromagnetic Compatibility.