A method for studying the self-interstitial trapping and clustering at impurities in an irradiated metal and its application to chromium-doped aluminium

Abstract A simple analysis based on chemical rate theory is used to determine the trapping radius rt of a self-interstitial atom by an impurity, relative to that by a vacancy, ru—both from recovery experiments and damage rate experiments. It gives estimates for the concentrations of the various small interstitial clusters, nucleated or not at the impurities, in a temperature range extending from the end of stage 1 (free interstitial migration) to the beginning of stage III (free vacancy migration). Such an analysis applied to chromium-doped aluminium showed the existence of at least two trapping configurations, one of them becoming unstable around 60 K (shallow trapping). At a temperature where the two configurations coexist (∼50K) the trapping radius was found of the order of the next nearest neighbour distance, the ratio rt/rv being equal to 0.35. At that temperature, the deep trapping is found much less likely than the shallow trapping. Moreover, the probability of deep trapping for an interstitial whi...

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