Noise and Diffusion of Hot Carriers

Every electrical system biased by a dc voltage or a dc current exhibits fluctuations of the voltage and/or of the current at its terminals. These fluctuations are called the noise. The bias point is determined as the intersection of the characteristics of the system under consideration and of the output circuit. Therefore, the noise depends partly on the inner properties of the system. In the same way, the noise of the system is also governed by its inner properties.

[1]  C. Canali,et al.  High‐field diffusion of electrons in silicon , 1975 .

[2]  Joseph G. Hoffman,et al.  Quantum Theory of Atoms, Molecules and the Solid State: A Tribute to John C. Slater , 1967 .

[3]  H. Olson.  Literature Review : NOISE: SOURCES, CHARACTERIZATION, MEASUREMENT Albert Van Der Ziel Prentice-Hall, Inc., Englewood Cliffs, N. J. (1970) , 1972 .

[4]  J. Nougier.  Anisotropy in diffusion-noise temperature and differential mobility induced in semiconductors by an external electric field , 1973 .

[5]  J. P. Nougier,et al.  Differential relaxation times and diffusivities of hot carriers in isotropic semiconductors , 1977 .

[6]  Dietrich Wolf,et al.  Noise in physical systems , 1978 .

[7]  F. Robinson,et al.  Noise and fluctuations in electronic devices and circuits , 1974 .

[8]  N. Wiener.  Generalized harmonic analysis , 1930 .

[9]  A. van der Ziel,et al.  Noise in single injection diodes. II. Applications , 1975 .

[10]  George Weiss,et al.  Fluctuation Phenomena in Solids , 1965 .

[11]  J. Nougier,et al.  Mobility, Noise Temperature, and Diffusivity of Hot Holes in Germanium , 1973 .

[12]  C. Jacoboni,et al.  Electron diffusion in CdTe , 1973 .

[13]  J. Nash,et al.  Experimental determination of highly concentration‐sensitive effects of intervalley electron‐electron scattering on electric‐field‐dependent repopulation in n‐Si at 77 K , 1974 .

[14]  J. Nougier,et al.  Noise of hot carriers in the channel of n silicon junction gate field effect transistors , 1978 .

[15]  C. Canali,et al.  On the diffusivity of holes in silicon , 1979 .

[16]  K. M. V. Vliet,et al.  The quantum correction of the Einstein relation for high frequencies , 1977 .

[17]  T. Sigmon,et al.  DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON , 1969 .

[18]  H. Callen,et al.  Irreversibility and Generalized Noise , 1951 .

[19]  M. Nicolet,et al.  Noise calculation by the impedance‐field method: Application to single injection , 1973 .

[20]  J. P. Nougier,et al.  Identity between spreading and noise diffusion coefficients for hot carriers in semiconductors , 1978 .

[21]  G. S. Kino,et al.  Transport Properties of GaAs , 1968 .

[22]  A. Khintchine.  Korrelationstheorie der stationären stochastischen Prozesse , 1934 .

[23]  P. J. Price.  Noise Theory for Hot Electrons , 1959, IBM J. Res. Dev..

[24]  J. Vaissière,et al.  n-Type silicon at 77 K : hot carrier noise and not generation recombination noise , 1978 .

[25]  D. J. Bartelink,et al.  DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD , 1970 .

[26]  K. M. V. Vliet.  Markov Approach to Density Fluctuations Due to Transport and Scattering. I. Mathematical Formalism , 1971 .

[27]  J. Nougier.  Noise Temperature and the Spectral Density of Hot Carrier Velocity Flutuations in Semiconductors , 1973 .

[28]  C. Jacoboni,et al.  Negative differential mobility in III–V and II–VI semiconducting compounds , 1971 .

[29]  Renuka P. Jindal,et al.  Generation-recombination noise at 77°K in silicon bars and JFETs☆ , 1979 .

[30]  C. Jacoboni,et al.  Electron drift velocity in silicon , 1975 .

[31]  C. Jacoboni,et al.  Hot electron diffusion in CdTe , 1975 .

[32]  M. J. Stephen.  Noise in the ac Josephson Effect , 1969 .

[33]  A. Einstein.  Über die von der molekularkinetischen Theorie der Wärme geforderte Bewegung von in ruhenden Flüssigkeiten suspendierten Teilchen [AdP 17, 549 (1905)] , 2005, Annalen der Physik.

[34]  J. Gunn,et al.  Noise Temperature of Hot Electrons in Germanium , 1962 .

[35]  J. Nougier,et al.  Anisotropy of the differential conductivity and of the transverse diffusion coefficient in n‐type silicon , 1978 .

[36]  A. van der Ziel,et al.  Noise in single injection diodes. I. A survey of methods , 1975 .