Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers

We report on optically pumped mid-IR semiconductor lasers that are based on type-II wells. A systematic study of the effect of increasing the In-content in the InxGa1-xSb hole-well suggests that improved hole confinement results in improved power conversion efficiency at elevated temperatures that is also accompanied by a reduction in threshold power and a reduction in T0, the characteristics for threshold.