Self‐consistent energy levels in p‐type delta‐doped quantum wells in GaAs

We present a self‐consistent calculation of the electronic structure of p‐type delta‐doped quantum wells in GaAs. We examine the dependence of the energy levels, Fermi level and the depth of the well with impurity concentration. We show that in this system the Fermi level is very close to the valence band; the heavy‐hole subbands, as expected, contain many more states than the light‐hole ones. Our results agree quite well with the experimental results available for this system.

[1]  R. Pérez-Álvarez,et al.  A simple model for delta‐doped field‐effect transistor electronic states , 1995 .

[2]  R. Pathak,et al.  Time‐resolved study of carrier capture and recombination in monolayer Be δ‐doped GaAs , 1995 .

[3]  M. Kao,et al.  Characteristics of a δ ‐doped GaAs/InGaAs p‐channel heterostructure field‐effect transistor , 1995 .

[4]  R. H. Williams,et al.  The characterization of the growth of sub-monolayer coverages (1/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study , 1995 .

[5]  T. Iida,et al.  Carbon doping into GaAs using combined ion beam and molecular beam epitaxy method , 1995 .

[6]  P. Vaccaro,et al.  Diffusion of Si-acceptor in δ-doped GaAs grown on GaAs(111)A by molecular beam epitaxy , 1995 .

[7]  C. Tu,et al.  p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy , 1995 .

[8]  B. Jogai.  Charge transfer limitations in δ‐doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors , 1995 .

[9]  Biagi,et al.  Two-dimensional versus three-dimensional behavior of a free-carrier gas in delta -doped p-type GaAs(001). , 1994, Physical review. B, Condensed matter.

[10]  Kang L. Wang,et al.  Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy , 1993 .

[11]  B. Hamilton,et al.  Electronic structure of δ-doped quantum wells , 1993 .

[12]  R. P. Álvarez,et al.  Niveles de energia de un pozo cuantico delta dopado , 1992 .

[13]  Ruiz,et al.  Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be- delta -doped GaAs. , 1991, Physical review. B, Condensed matter.

[14]  Wilke,et al.  Theoretical approach to delta doping of GaAs with In. , 1991, Physical review. B, Condensed matter.

[15]  Ioriatti.  Thomas-Fermi theory of delta -doped semiconductor structures: Exact analytical results in the high-density limit. , 1990, Physical review. B, Condensed matter.

[16]  K. Nakagawa,et al.  Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy , 1989 .

[17]  H. Reisinger,et al.  Growth and characterization of a delta‐function doping layer in Si , 1987 .

[18]  A. Fischer,et al.  The delta-doped field-effect transistor (δFET) , 1986, IEEE Transactions on Electron Devices.

[19]  G. Döhler.  Ultrathin doping layers as a model for 2D systems , 1978 .