A Computational Technique to Determine the Amplification of Rayleigh-Wave Modes in Multilayered Structures

A perturbational method to determine the amplification (attenuation) and velocity of Rayleigh-wave modes in multilayered structures is presented. The perturbation technique, using rigorous analysis as its starting point, is based on the application of the effective permittivity. The computational technique is applied to ZnOSi0,-Si structures. The drifting charge carriers move in an epitaxial layer, which can be partly depleted in order to reduce the dissipation and to control (together with the charge carrier drift velocity) the amplification. The conductivities of the semiconducting layers, the diffusion of charge carriers, the anisotropy, the piezoelectricity and the epitaxial layer thickness and its partial depletion are taken into account in the calculations. the accuracy of the theoretical results are compared with a rigorous analysis. The validity of the computational technique and