Design of active inductors in SiGe/SiGe:C processes for RF applications

Applicability of silicon-based heterojunction bipolar processes is investigated for designing active inductors with high quality factors (Q). Results for grounded type one-port active inductor incorporating frequency-dependent as well as frequency-independent negative resistances are examined. Later, the negative resistance aspect is extended from one-port to two-port active inductor circuit to ensure its use as a series element. The enhanced Q-values of all the inductive circuits are observed in accordance with the theory. Moderately high-Q values (∼100) with considerable inductances (∼0.2–1 nH) are obtained in the RF frequency ranges (∼5–9 GHz). © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.

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