Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
暂无分享,去创建一个
Yi-Jen Chan | Boon-Khim Liew | B. Liew | Y. Chan | Chia-Hung Huang | Chung-Chian Weng | Chia-Hung Huang | Chung-Chian Weng
[1] L.E. Larson,et al. A deep-submicrometer microwave/digital CMOS/SOS technology , 1991, IEEE Electron Device Letters.
[2] G. Guegan,et al. High-frequency performance of submicrometer channel-length silicon MOSFETs , 1991, IEEE Electron Device Letters.
[3] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .
[4] N. Camilleri,et al. Silicon MOSFETs, the microwave device technology for the 1990s , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.
[5] N. Camilleri,et al. Extracting small-signal model parameters of silicon MOSFET transistors , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
[6] R. Quere,et al. A new large-signal model based on pulse measurement techniques for RF power MOSFET , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
[7] R. Culbertson,et al. A physical large signal Si MOSFET model for RF circuit design , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.