论文信息 - Separate‐confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers

Separate‐confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers

We experimentally investigated the separate‐confinement heterostructure (SCH) layer thickness and SCH band‐gap wavelength dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers. The dependence is explained by the carrier transport between the SCH layers and the wells.

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