论文信息 - Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process

Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process

Electrical properties of epitaxial silicon layers formed at very low temperatures of 320–350 °C by a low kinetic energy particle process are presented. Dopant impurities in the target material are substitutionally incorporated into the epitaxially grown layer, thus being electrically activated without any additional heat cycles. An epitaxial silicon layer having a resistivity as low as 0.0018 Ω cm has been obtained using a heavily arsenic‐doped silicon target. A p‐n junction diode formed by directly depositing an n‐type epilayer on a p‐type substrate exhibits a reverse current level as low as 1.88×10−9 A/cm2 at a reverse‐bias voltage of 5 V. The electrical properties of the grown film have shown a good correlation to the crystallinity of the film, which changes depending upon the ion bombardment energy.

[1] T. Ohmi,et al. High-rate growth at low temperatures by free-jet molecular flow: surface-reaction film-formation technology , 1988 .

[2] Tadahiro Ohmi,et al. Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process , 1988 .

[3] T. Takagi,et al. Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams , 1980 .

[4] Bernard S. Meyerson,et al. Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films , 1987 .

[5] Tadahiro Ohmi,et al. Low-temperature silicon epitaxy by low-energy bias sputtering , 1988 .

[6] T. Itoh,et al. Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition , 1977 .

[7] Tadahiro Ohmi,et al. In situ substrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment , 1988 .