Account for Radiation Effects in Signal Integrity Analysis of PCB Digital Systems

A method of account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics and RAMP parameters in according with the known physical relations. Examples of digital IC output and cross talk signals simulation with Hyper Lynx software using the created IBIS model is presented.

[1]  Tzong-Lin Wu Fundamentals of signal integrity , 2008, 2008 IEEE International Symposium on Electromagnetic Compatibility.

[2]  G. C. Messenger,et al.  The effects of radiation on electronic systems , 1986 .

[3]  James R. Schwank,et al.  Correlation of Radiation Effects in Transistors and Integrated Circuits , 1985, IEEE Transactions on Nuclear Science.

[4]  K. O. Petrosjanc,et al.  VLSI device parameters extraction for radiation hardness modeling with SPICE , 1993, ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures.

[5]  A. Igor Multi-level Methodology for CMOS SOI/SOS MOSFET Parameterization for IC Radiation Hardness Simulation with SPICE , 2010 .

[6]  L. Green,et al.  Signal integrity , 1998, Northcon/98. Conference Proceedings (Cat. No.98CH36264).