Photoluminescent silicon nanocrystals synthesized by reactive laser ablation

We report the synthesis of Si nanocrystals embedded in a SiO2 matrix using reactive laser ablation in oxygen atmosphere followed by annealing. We observe a strong photoluminescence signal, which is related to the oxygen background pressure used for synthesis. The average nanoparticle size, obtained independently by fitting photoluminescence spectra and from x-ray diffraction patterns, decreases from 16to2nm with increasing oxygen pressure from 0.01to1.1mTorr. The maximum photoluminescence intensity is observed at 0.8mTorr, which corresponds to a crystal size of 2.2±0.4nm. We find that the concentration of nonoxidized Si, which is controlled by the oxygen pressure, determines the final nanocrystal size.

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