The effect of O2 on reactively sputtered zinc oxide

The rf diode sputtering of a ZnO target using an Ar/O2 gas mixture was studied as a function of the O2 content of the sputtering gas. Films sputtered using gas mixtures containing 0–100% O2 were investigated. Glow discharge spectrometry was used to monitor the ionized species present in the various Ar/O2 plasmas. The crystallographic orientation of the films was found to be highly correlated with the ratio of the number of Zn to ZnO ions in the plasma. The most highly ordered films were obtained when the Zn to ZnO ion ratio was at a minimum which occurred when a 75% Ar/25% O2 gas mixture was used. This result can be explained in terms of the relative degree of oxidation of the ZnO target surface and the number of secondary electrons in the plasma for the various Ar/O2 sputtering gas mixtures.

[1]  J. Coburn.  A System for Determining the Mass and Energy of Particles Incident on a Substrate in a Planar Diode Sputtering System , 1970 .

[2]  J. Lounsbury.  Effects of Added O2 upon Argon Emission from an rf Glow Discharge , 1969 .

[3]  J. Coburn,et al.  Positive‐ion bombardment of substrates in rf diode glow discharge sputtering , 1972 .

[4]  H. F. Winters,et al.  Effect of Oxygen on the rf-Sputtering Rate of SiO2 , 1968 .

[5]  J. Coburn,et al.  Glow‐discharge mass spectrometry—Technique for determining elemental composition profiles in solids , 1974 .

[6]  N. F. Foster.  Crystallographic Orientation of Zinc Oxide Films Deposited by Triode Sputtering , 1969 .

[7]  S. Maniv,et al.  Controlled texture of reactively rf‐sputtered ZnO thin films , 1978 .

[8]  B. Khuri-Yakub,et al.  Studies of the optimum conditions for growth of rf‐sputtered ZnO films , 1975 .

[9]  F. Hickernell.  Microstructure of ZnO films used for acoustic surface‐wave generation , 1975 .

[10]  A. J. Shuskus,et al.  R.f. sputtered epitaxial ZnO films on sapphire for integrated optics , 1976 .

[11]  W. Eckstein,et al.  A mass spectrometric study of neutral−sputtered species in an rf glow discharge sputtering system , 1975 .

[12]  R. Inaba,et al.  Preparation and Properties of rf Sputtered Films of ZnO as an Ultrasonic Transducer , 1971 .

[13]  J. Coburn,et al.  A Study of the Neutral Species rf Sputtered from Oxide Targets , 1974 .

[14]  J. Vuillod.  Properties of ZnO Films Prepared by dc and rf Diode Sputtering , 1972 .

[15]  T. Shiosaki.  High-Speed Fabrication of High-Quality Sputtered ZnO Thin-Films for Bulk and Surface Wave Applications , 1978 .

[16]  G. L. Dybwad.  c-Axis Orientation of Sputtered ZnO Films , 1971 .

[17]  G. Rozgonyi,et al.  Epitaxial Thin Films of ZnO on CdS and Sapphire , 1969 .

[18]  G. Rozgonyi,et al.  PREPARATION OF ZnO THIN FILMS BY SPUTTERING OF THE COMPOUND IN OXYGEN AND ARGON , 1966 .

[19]  N. Chubachi,et al.  Variation of c-Axis Orientation of ZnO Thin Films Deposited by DC Diode Sputtering , 1973 .

[20]  G. Kino,et al.  Theory of interdigital couplers on nonpiezoelectric substrates , 1973 .

[21]  L. I. Maissel,et al.  Dielectric Thin Films through rf Sputtering , 1966 .

[22]  K. Wasa,et al.  Highly‐oriented ZnO films by rf sputtering of hemispherical electrode system , 1976 .

[23]  J. Coburn,et al.  PLASMA DIAGNOSTICS OF AN rf-SPUTTERING GLOW DISCHARGE. , 1971 .

[24]  N. F. Foster,et al.  ZINC OXIDE FILM TRANSDUCERS , 1966 .

[25]  F. Hickernell,et al.  Zinc-oxide thin-film surface-wave transducers , 1976, Proceedings of the IEEE.

[26]  A. Chernets,et al.  Preparation and properties of thin films of ZnO for hypersonic transducers , 1973 .

[27]  J. Larson,et al.  RF Diode Sputtered ZnO Transducers , 1972, IEEE Transactions on Sonics and Ultrasonics.

[28]  T. Tisone,et al.  Copper/oxygen glow‐discharge spectrometry , 1977 .

[29]  K. Wasa,et al.  Structures and electrical properties of zinc oxide films prepared by low pressure sputtering system , 1971 .

[30]  G. Coquin,et al.  Cadmium Sulphide and Zinc Oxide Thin-Film Transducers , 1968, IEEE Transactions on Sonics and Ultrasonics.