Effects of hydrogen on defect properties in germanium

Abstract We summarize our recent results in the effects of hydrogen on defects in germanium. Two types of hydrogen-related defect states were observed. Undoped germanium crystals which were irradiated with 1.0 MeV electrons and subsequently implanted with 27 keV hydrogen exhibited two dominant electron traps at E c –0.36 eV and E c –0.41 eV. A divacancy-like defect associated with the level at E c –0.41 eV becomes more stable when the defect captures hydrogen atoms. Sb-doped germanium crystals which were irradiated with 2.0 MeV electrons exhibited two dominant electron traps at E c –0.23 eV and E c –0.52 eV. Subsequently implantation with 25 keV hydrogen in the sample does selectively passivate the 0.23 eV level associated with a defect containing antimony. The 0.23 eV level reduced by hydrogen implantation annealed out at 70°C, much lower than annealing temperature of the level produced by the electron irradiation alone.

[1]  J. Zhou,et al.  In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere , 1986 .

[2]  Takashi Ito,et al.  Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium , 1986 .

[3]  G. Qin,et al.  Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon , 1986 .

[4]  E. Haller,et al.  Deuterium in germanium: Interaction with point defects , 1984 .

[5]  P. Mooney,et al.  Annealing of electron-induced defects inn-type germanium , 1983 .

[6]  J. Bourgoin,et al.  Characteristics of the electron traps produced by electron irradiation inn-type germanium , 1982 .

[7]  H. Saito,et al.  Defect States in n-Type Germanium Irradiated with 1.5 MeV Electrons , 1982 .

[8]  S. Pearton.  Hydrogen passivation of copper‐related defects in germanium , 1982 .

[9]  E. Haller,et al.  A DONOR COMPLEX WITH TUNNELING HYDROGEN IN PURE GERMANIUM , 1980 .

[10]  E. Haller,et al.  Acceptor complexes in germanium: Systems with tunneling hydrogen , 1980 .

[11]  E. Haller,et al.  Deep Level Transient Spectroscopy of High-Purity Germanium Diodes/Detectors , 1979, IEEE Transactions on Nuclear Science.

[12]  R. Hall,et al.  DLTS Measurements of Trapping Defects in High Purity Germanium , 1979, IEEE Transactions on Nuclear Science.

[13]  L. M. Roth,et al.  Vibrational and Electronic Structure of Hydrogen-Related Defects in Silicon Calculated by the Extended Hückel Theory , 1977 .

[14]  E. Haller,et al.  Hydrogen-Multivalent Acceptor Complexes in High-Purity Germanium , 1977, IEEE Transactions on Nuclear Science.

[15]  S. Pearton,et al.  Reduction in γ-ray damage in hydrogenated germanium , 1982 .

[16]  J. Bourgoin,et al.  Threshold energy for atomic displacement in electron irradiated germanium , 1980 .

[17]  P. Mooney,et al.  Energy levels in electron irradiated n-type germanium , 1979 .

[18]  V. I. Sidorov,et al.  Sov Phys Semicond , 1975 .