论文信息 - 80 GHz bandwidth-gain-product Ge/Si avalanche photodetector by selective Ge growth

80 GHz bandwidth-gain-product Ge/Si avalanche photodetector by selective Ge growth

We demonstrate selectively grown Ge/Si avalanche photodetectors with a bandwidth of 10 GHz at gain=8 at 1310 nm. The high bandwidth-gain-product of 80 GHz and Si monolithic integration capability offer great potentials for future applications.

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