High-power K-band GaN PA MMICs and module for NPR and PAE

Two K-Band GaN MMICs and an SSPA module that display high-power and linearity are presented. The two MMICs utilize a 0.2pm gate GaN HEMT technology and are designed for 17.2 to 20.2 GHz at a 20V bias. The first design, APN269, shows over 10W of output power at 38% PAE at Psat and 15dB NPR at P2dB. The second design, APN272, shows 8.5W of output power at 46% PAE at Psat and over 18dB NPR. Finally, the module displays 30W and over 22% PAE at Psat with 15dB NPR at P2dB. These results showcase optimizing for power and PAE while maintaining high-linearity.

[1]  Youn Sub Noh,et al.  A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications , 2016, IEEE Microwave and Wireless Components Letters.

[2]  Mansoor Siddiqui,et al.  High power and high efficiency Ka band power amplifier , 2015, 2015 IEEE MTT-S International Microwave Symposium.

[3]  Jongchan Kang,et al.  Wideband linear distributed GaN HEMT MMIC power amplifier with a record OIP3/Pdc , 2016, 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).

[4]  Jose C. Pedro,et al.  Intermodulation Distortion in Microwave and Wireless Circuits , 2003 .

[5]  Stepan Matejka.  Noise power ratio calculation based on the power spectra measurement , 2009, 2009 19th International Conference Radioelektronika.

[6]  Xu Xiaofan,et al.  Design and realization of a C-band 2kW GaN power amplifier module , 2016, 2016 IEEE MTT-S International Wireless Symposium (IWS).

[7]  Richard Campbell,et al.  A linear high efficiency doherty amplifier with 40 dBm saturated output power using GaN on SiC HEMT devices , 2015, 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).