论文信息 - The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

This paper reports the development of symmetric blocking SiC p-GTO thyristors. The proposed thyristor structure features a positive bevel edge termination implemented by orthogonal dicing technique. In this paper, a detailed design of the device structure, forward current-voltage characteristics, and symmetric blocking capabilities are discussed.

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