论文信息 - 50nm GaAs mHEMTs and MMICs for Ultra-Low Power Distributed Sensor Network Applications

50nm GaAs mHEMTs and MMICs for Ultra-Low Power Distributed Sensor Network Applications

We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 muW/mu demonstrating fT of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 muW) radio transceivers for autonomous distributed sensor network applications

[1] K. Elgaid,et al. 50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz , 2005, IEEE Electron Device Letters.