LER evaluation of molecular resist for EUV lithography

We have designed and synthesized a molecular resist material, which has no distribution of the protecting groups and have evaluated its performance as a molecular resist with EB and EUV exposure tool. The molecular resist attained a resolution of sub-45nm patterning at an exposure dose of 12mJ/cm^2. It was found that controlling the distribution of the protecting groups in a molecular resist material has a great impact on improving line edge roughness (LER). Low LER values of 3.1nm (inspection length: L=620nm) and 3.6nm (L=2000nm) were achieved with this molecular resist using Extreme UltraViolet (EUV) lithography tool.

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