High-Power MIC Diode Limiters for S- and X-Band RADARs

S- and X-band passive MIC diode limiters have been developed for high power applications. Two PIN diodes with I layer thickness of 9.5mu m and 1.5mu m are shunt-mounted to 50 ohm microstrip lines. The limiters can handle 2-kW peak input power with less than 100mW peak leakage power for pulsed RF signals of 1mu s width and 0.1 percent duty ratio.