Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields
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[1] S. Holland,et al. A quantitative physical model for time-dependent breakdown in SiO2 , 1985, 23rd International Reliability Physics Symposium.
[2] K. Hinode,et al. Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects , 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
[3] Ernest Y. Wu,et al. On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques , 2002 .
[4] J. Scarpulla,et al. A TDDB model of Si/sub 3/N/sub 4/-based capacitors in GaAs MMICs , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
[5] Pseudo-breakdown events induced by biased-thermal-stressing of intra-level Cu interconnects-reliability and performance impact , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
[6] Chih-I Wu,et al. Correlation of Surface and Film Chemistry with Mechanical Properties in Interconnects , 2003 .
[7] Suzumura Naohito,et al. A NEW TDDB DEGRADATION MODEL BASED ON CU ION DRIFT IN CU INTERCONNECT DIELECTRICS , 2007 .
[8] Wen Wu,et al. A physical model of time-dependent dielectric breakdown in copper metallization , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
[9] J. McPherson,et al. Acceleration Factors for Thin Gate Oxide Stressing , 1985, 23rd International Reliability Physics Symposium.
[10] J. McPherson,et al. UNDERLYING PHYSICS OF THE THERMOCHEMICAL E MODEL IN DESCRIBING LOW-FIELD TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO2 THIN FILMS , 1998 .
[11] W. Mckee,et al. Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
[12] Ennis T. Ogawa,et al. Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
[13] J. Gill,et al. Reliability Characterization of BEOL Vertical Natural Capacitor using Copper and Low-k SiCOH Dielectric for 65nm RF and Mixed-Signal Applications , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[14] K. Banerjee,et al. Comparison of E and 1/E TDDB models for SiO/sub 2/ under long-term/low-field test conditions , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[15] J. McPherson,et al. A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.