Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates
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M. Weyers | Yuh-Renn Wu | Chia-Lung Tsai | Chia-Yen Huang | C. Netzel | S. Walde | Yi-Keng Fu | S. Hagedorn | Hsueh-Hsing Liu | Yuh‐Renn Wu