论文信息 - Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode - 字舞流文

Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode

Rinpei Hayashibe | Kiichi Kamimura | Hiroaki Shiozawa | Tomohiko Yamakami | K. Kamimura | T. Yamakami | H. Shiozawa | R. Hayashibe

[1] L. Feldman,et al. Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC , 2003 .

[2] K. Abe,et al. Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH3 , 2005 .

[3] Jisheng Pan,et al. X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source , 2008 .

[4] K. Abe,et al. Characterization of Metal–Insulator–Semicomductor Capacitors with Insulating Nitride Films Grown on 4H-SiC , 2008 .

[5] S. Dhar,et al. Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC , 2005 .