Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices
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Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.