Bow-tie-antenna-coupled terahertz detectors using AlGaN/GaN field-effect transistors with 0.25 micrometer gate length

We report on the design and characterization of terahertz detection devices using field-effect transistors and on-chip broadband antennas. Experimental results from measurements on high-electron-mobility transistors fabricated with a AlGaN/GaN heterostructure are presented. Physical device parameters are extracted. The measured samples exhibit good noise-equivalent power (NEP) values at 0.6 THz of down to ~ 125 pW/√Hz. The responsivity is maximized by gate width. The best NEP value is found for the narrowest devices.

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