论文信息 - Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE

Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE

Abstract A novel structure of the active region of multiple quantum well (MQW) InGaAsP lasers at 1.55 μm is proposed. Both barriers and wells have the same group V (As/P) composition. This minimizes the thermal intermixing problems encountered with more conventional structures. The specific band structure associated with this design (loose hole confinement, strong electron confinement) may also lead to specific, favorable device characteristics such as, for instance, high-speed intensity modulation capability.

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