论文信息 - 1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device

1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device

1D thickness scaling study on a-GST has been successfully demonstrated without the help of ultra-fine lithography. Vth linearly scales down to ∼0.65 V at 6 nm scale, showing that stable read operation is possible at elevated temperature (70 °C). Reset R drift shows no dependency on the a-GST thickness up to 6 nm regime. Thin a-GST shows enhanced thermal stability compared to thick a-GST.

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