Sputtered silicate-limit NASICON thin films for electrochemical sensors

Abstract We have demonstrated for the first time the production of silicate-limit NASICON [Na 4 Zr 2 (SiO 4 ) 3 ] in the form of thin films. The ionic conductivity was investigated as a function of the temperature. The best measured conductivity at 300°C is 0.5×10 -4 (S/cm) -1 . We report here on the evaluation of the mechanical properties sputtered NASICON thin films