A novel gate insulator for flexible electronics

Abstract Field effect transistors using a poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al2O3 on Al) are demonstrated. Anodised films are pinhole-free, homogenous oxide layers of precisely controlled thickness. The anodisation process requires no vacuum steps; anodised Al2O3 is insoluble in organic solvents, and Al films are cheaply available as laminates on flexible substrates. Anodised Al2O3 is confirmed to have high gate capacitance (≈60 nF/cm2) and electric breakdown strength (>3 MV/cm in the working device). This property profile answers to the demands on gate insulators for flexible electronics applications.

[1]  Carmen Bartic,et al.  Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors , 2002 .

[2]  Jon-Paul Maria,et al.  Alternative dielectrics to silicon dioxide for memory and logic devices , 2000, Nature.

[3]  R. Friend,et al.  New semiconductor device physics in polymer diodes and transistors , 1988, Nature.

[4]  Janos Veres,et al.  Low‐k Insulators as the Choice of Dielectrics in Organic Field‐Effect Transistors , 2003 .

[5]  Robert A. Street,et al.  Polymer thin-film transistors with chemically modified dielectric interfaces , 2002 .

[6]  G. Wood,et al.  Hydroxyl ion and proton mobility during anodic oxidation of aluminium , 1967 .

[7]  John A. Rogers,et al.  Anodization and Microcontact Printing on Electroless Silver: Solution-Based Fabrication Procedures for Low-Voltage Electronic Systems with Organic Active Components , 2000 .

[8]  T. C. Downie,et al.  Anodic oxide films on aluminum , 1969 .

[9]  H. Bässler.  Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study , 1993 .

[10]  M. Feng,et al.  Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors , 1996 .

[11]  Gerwin H. Gelinck,et al.  Active‐Matrix Displays Driven by Solution‐Processed Polymeric Transistors , 2002 .

[12]  Zhenan Bao,et al.  Soluble and processable regioregular poly(3‐hexylthiophene) for thin film field‐effect transistor applications with high mobility , 1996 .

[13]  H. Sirringhaus,et al.  High-Resolution Ink-Jet Printing of All-Polymer Transistor Circuits , 2000, Science.