Two-photon absorption in InP substrates in the 1.55μm range

The nonlinear optical absorption has been studied in three different InP substrates (semi-insulating Fe-doped, n-type S-doped, and p-type Zn-doped) by subpicosecond pump-probe differential transmission experiments at 1.6μm. A strong negative differential transmission peak is observed at zero delay, induced by an autocorrelation effect: it is related to two-photon absorption, but not to the occurrence of transitions involving any midgap level (noticeably the Fe-related one). The experimental two-photon absorption coefficient β for InP stands in the range between 24 and 33cm∕GW.

[1]  A. Guenther,et al.  Two-photon absorption in several direct-gap crystals , 1980 .

[2]  Inspec.  Properties of Indium Phosphide , 1990 .

[3]  Carl R. Pidgeon,et al.  Two-Photon Absorption in Zinc-Blende Semiconductors , 1979 .

[4]  B. Justus,et al.  Z-scan studies of nonlinear absorption and refraction in bulk, undoped InP , 1995 .

[5]  C. C. Lee,et al.  Two-photon absorption with exciton effect for degenerate valence bands , 1974 .

[6]  Maciej Bugajski,et al.  Concentration‐dependent absorption and photoluminescence of n‐type InP , 1985 .

[7]  Intervalence band absorption in InP , 1999 .

[8]  Georg Müller,et al.  Infrared absorption of n- and p-type Fe-doped InP and mapping of the Fe distribution , 1991 .

[9]  H. Fetterman,et al.  LT-GaAs detector with 451 fs response at 1.55 /spl mu/m via two-photon absorption , 1999 .

[10]  Mohammed Zaknoune,et al.  Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density , 2002 .

[11]  Erich P. Ippen,et al.  Two-photon absorption in semiconductor saturable absorber mirrors , 1999 .

[12]  M. J. Soileau,et al.  Two-Photon Absorption, Nonlinear Refraction and Optical Limiting in Semiconductors , 1985 .

[13]  Kwang-Su Lee,et al.  Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe , 2000 .

[14]  T. Sajavaara,et al.  Broadband semiconductor saturable absorber mirrors in the 1.55-/spl mu/m wavelength range for pulse generation in fiber lasers , 2002 .

[15]  Mansoor Sheik-Bahae,et al.  Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe , 1992 .