Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer.

[1]  J. Fraser,et al.  InAs self-assembled quantum-dot lasers grown on (100) InP , 2002 .

[2]  J. Brault,et al.  Alloying effects in self-assembled InAs/InP dots , 1999 .

[3]  A. Forchel,et al.  Epitaxial growth of 1.55 /spl mu/m emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications , 2002, International Conference on Molecular Bean Epitaxy.

[4]  Jean-Michel Gérard,et al.  In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As , 1992 .

[5]  T. Anan,et al.  Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy , 1993 .

[6]  G. B. Stringfellow,et al.  Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy , 1989 .

[7]  Euijoon Yoon,et al.  Effects of As/P exchange reaction on the formation of InAs/InP quantum dots , 1999 .

[8]  G. Patriarche,et al.  Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm , 2001 .

[9]  B. Wessels,et al.  InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy , 1990 .

[10]  Anupam Madhukar,et al.  Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution , 1999 .

[11]  Young Ju Park,et al.  Reversible transition between InGaAs dot structure and InGaAsP flat surface , 1997 .

[12]  J. P. Silveira,et al.  Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001) , 2000 .