Preparation and characterisation of NiMn2O4 films

Abstract Thin films of NiMn 2 O 4 NTC thermistor material were produced by electron-beam-evaporation from phase pure NiMn 2 O 4 source material. The films were characterised using SEM, EDAX, XRD and an Alpha-Step stylus profileometer. Resistance vs. temperature characteristics were obtained over a wide range of temperature and suggested that the conduction mechanism was by variable range hopping. A theoretical model for the thickness profile of the films was derived and comparison of theory with experimental findings showed good agreement.