The large world of FET small‐signal equivalent circuits (invited paper)
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Dominique Schreurs | Alina Caddemi | Giovanni Crupi | Gilles Dambrine | D. Schreurs | G. Dambrine | G. Crupi | A. Caddemi
[1] E. Legros,et al. Very high-frequency small-signal equivalent circuit for short gate-length InP HEMTs , 1997 .
[2] T. Fjeldly,et al. Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs , 2013, IEEE Transactions on Electron Devices.
[3] Lin-Sheng Liu. An improved empirical large-signal model for the GaAs- and GaN-based HEMTs , 2011 .
[4] Herbert Zirath,et al. Accurate small-signal modeling of HFET's for millimeter-wave applications , 1996 .
[5] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .
[6] Christian C. Enz,et al. RF Small-Signal and Noise Modeling Including Parameter Extraction of Nanoscale MOSFET From Weak to Strong Inversion , 2015, IEEE Transactions on Microwave Theory and Techniques.
[7] Manfred Berroth,et al. High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .
[8] Fadhel M. Ghannouchi,et al. Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design , 2011 .
[9] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .
[10] Zheng Zhong,et al. A Novel 4-D Artificial-Neural-Network-Based Hybrid Large-Signal Model of GaAs pHEMTs , 2016, IEEE Transactions on Microwave Theory and Techniques.
[11] Roberto S. Murphy-Arteaga,et al. Modeling and parameter extraction of test fixtures for MOSFET on‐wafer measurements up to 60 GHz , 2013 .
[12] Hermann A. Haus,et al. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect-Transistors , 1975 .
[13] J. Verspecht,et al. Broad-band poly-harmonic distortion (PHD) behavioral models from fast automated simulations and large-signal vectorial network measurements , 2005, IEEE Transactions on Microwave Theory and Techniques.
[14] Ruimin Xu,et al. An improved small‐signal equivalent circuit model for 4H‐SIC power mesfets , 2008 .
[15] A. Santarelli,et al. Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions , 2007, IEEE Transactions on Microwave Theory and Techniques.
[16] Paul J. Tasker,et al. Direct extraction of LDMOS small signal parameters from off-state measurements , 2000 .
[17] Kubilay Sertel,et al. Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis , 2016, IEEE Transactions on Microwave Theory and Techniques.
[18] Adelmo Ortiz-Conde,et al. Modeling the Impact of Multi-Fingering Microwave MOSFETs on the Source and Drain Resistances , 2014, IEEE Transactions on Microwave Theory and Techniques.
[19] R. A. Minasian,et al. Simplified GaAs m.e.s.f.e.t. model to 10 GHz , 1977 .
[20] T. Brazil,et al. An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices , 2008, IEEE Transactions on Microwave Theory and Techniques.
[21] Jin-Koo Rhee,et al. Small-signal modeling approach to 0.1-μm metamorphic HEMTs for W-band coplanar MMIC amplifier design , 2012 .
[22] A. Zarate-de Landa,et al. Advances in Linear Modeling of Microwave Transistors , 2009, IEEE Microwave Magazine.
[23] Emanuele Cardillo,et al. Microwave noise parameter modeling of a GaAs HEMT under optical illumination , 2016 .
[24] R. S. Pengelly,et al. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs , 2012, IEEE Transactions on Microwave Theory and Techniques.
[25] Andrei Grebennikov,et al. High‐efficiency transmission‐line inverse Class F power amplifiers for 2‐GHz WCDMA systems , 2011 .
[26] Jean-Pierre Colinge,et al. High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits , 1999 .
[27] Dominique Schreurs,et al. A comprehensive review on microwave FinFET modeling for progressing beyond the state of art , 2013 .
[28] Giorgio Vannini,et al. In‐deep insight into the extrinsic capacitance impact on GaN HEMT modeling at millimeter‐wave band , 2012 .
[29] A. Caddemi,et al. Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs , 2006, IEEE Transactions on Microwave Theory and Techniques.
[30] A. Caddemi,et al. Scalable and multibias high frequency modeling of multi-fin FETs , 2006 .
[31] Sedki M. Riad,et al. Novel technique for estimating metal semiconductor field effect transitor parasitics , 2003 .
[32] Valeria Vadala,et al. Behavioral Modeling of GaN FETs: A Load-Line Approach , 2014, IEEE Transactions on Microwave Theory and Techniques.
[33] Giorgio Vannini,et al. Straightforward modeling of dynamic I–V characteristics for microwave FETs , 2014 .
[34] Roberto S. Murphy-Arteaga,et al. Consistent DC and RF MOSFET Modeling Using an $S$-Parameter Measurement-Based Parameter Extraction Method in the Linear Region , 2015, IEEE Transactions on Microwave Theory and Techniques.
[35] J.-P. Raskin,et al. High-Frequency Noise Performance of 60-nm Gate-Length FinFETs , 2008, IEEE Transactions on Electron Devices.
[36] Jean-Pierre Raskin,et al. High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors , 2008 .
[37] G. Kompa,et al. A new small-signal modeling approach applied to GaN devices , 2005, IEEE Transactions on Microwave Theory and Techniques.
[38] Giorgio Vannini,et al. Nonlinear modeling of LDMOS transistors for high-power FM transmitters , 2014 .
[39] Franco Giannini,et al. Small‐signal and large‐signal modeling of active devices using CAD‐optimized neural networks , 2002 .
[40] Sam-Dong Kim,et al. A Gate-Width Scalable Method of Parasitic Parameter Determination for Distributed HEMT Small-Signal Equivalent Circuit , 2013, IEEE Transactions on Microwave Theory and Techniques.
[41] M. Sudow,et al. Thermal Study of the High-Frequency Noise in GaN HEMTs , 2009, IEEE Transactions on Microwave Theory and Techniques.
[42] M. Berroth,et al. Broad-band determination of the FET small-signal equivalent circuit , 1990 .
[43] P.M. White,et al. Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements , 1993, IEEE Microwave and Guided Wave Letters.
[44] Wooyeol Choi,et al. Scalable small-signal modeling of RF CMOS FET based on 3-D EM-based extraction of parasitic effects , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.
[45] Giorgio Vannini,et al. Accurate closed-form model for computation of conductor loss of coplanar waveguide , 2010 .
[46] Li Shen,et al. An improved millimeter-wave small-signal modeling approach for HEMTs , 2014 .
[47] C. H. Oxley. Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds) , 2004 .
[48] S. Yanagawa,et al. Analytical method for determining equivalent circuit parameters of GaAs FETs , 1996 .
[49] Giorgio Vannini,et al. GaN HEMT noise modeling based on 50‐Ω noise factor , 2015 .
[50] A. Santarelli,et al. Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM Analyses , 2009, IEEE Transactions on Microwave Theory and Techniques.
[51] Marco Pirola,et al. Sensitivity‐based optimization and statistical analysis of microwave semiconductor devices through multidimensional physical simulation (invited article) , 1997 .
[52] J. Benedikt,et al. Nonlinear Data Utilization: From Direct Data Lookup to Behavioral Modeling , 2009, IEEE Transactions on Microwave Theory and Techniques.
[53] A. Caddemi,et al. A New Millimeter-Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay , 2008, IEEE Transactions on Microwave Theory and Techniques.
[54] Angelos Antonopoulos,et al. Open-source circuit simulation tools for RF compact semiconductor device modelling , 2014 .
[55] E. Vandamme,et al. Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures , 2001 .
[56] Sankha Subhra Mukherjee,et al. A physics‐based model of DC and microwave characteristics of GaN/AlGaN HEMTs , 2007 .
[57] Ernesto Limiti,et al. Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model , 2012 .
[58] R. Anholt,et al. Equivalent-circuit parameter extraction for cold GaAs MESFET's , 1991 .
[59] Yan Wang,et al. A new small-signal modeling and extraction method in AlGaN/GaN HEMTs , 2008 .
[60] Alina Caddemi,et al. Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K , 2006, IEEE Transactions on Instrumentation and Measurement.
[61] A. Siligaris,et al. A new empirical nonlinear model for sub-250 nm channel MOSFET , 2003, IEEE Microwave and Wireless Components Letters.
[62] J. Wood,et al. Bias-dependent linear, scalable millimeter-wave FET model , 2000, IMS 2000.
[63] Shen-Whan Chen,et al. An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz , 1997 .
[64] C. Bolognesi,et al. At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity , 2006, IEEE Transactions on Electron Devices.
[65] William Hughes,et al. High School General Music — Another Perspective , 1988 .
[66] J. R. Loo‐Yau,et al. An alternative method to extract the parasitic capacitances of GaN FETs , 2015 .
[67] Antonio Raffo,et al. Accurate EM-Based Modeling of Cascode FETs , 2010, IEEE Transactions on Microwave Theory and Techniques.
[68] I. Hunter,et al. Coupled electrothermal, electromagnetic, and physical modeling of microwave power FETs , 2006, IEEE Transactions on Microwave Theory and Techniques.
[69] M. J. Deen,et al. High frequency noise of MOSFETs I Modeling , 1998 .
[70] Nicole Andrea Evers,et al. Direct determination of the bias-dependent series parasitic elements in SiC MESFETs , 2003 .
[71] In Man Kang,et al. Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs , 2006 .
[72] Diego Marti,et al. Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies , 2013, IEEE Microwave Magazine.
[73] Jose Carlos Pedro,et al. Predictable Behavior: Behavioral Modeling from Measured Data , 2014, IEEE Microwave Magazine.
[74] C. Campbell,et al. GaN Takes the Lead , 2012, IEEE Microwave Magazine.
[75] Jin-Koo Rhee,et al. Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors , 2010 .
[76] N.B. Carvalho,et al. Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design , 2004, IEEE Transactions on Microwave Theory and Techniques.
[77] Ruimin Xu,et al. An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects , 2014, IEEE Transactions on Microwave Theory and Techniques.
[78] C. M. Snowden,et al. MICROWAVE AND MILLIMETER-WAVE DEVICE AND CIRCUIT-DESIGN BASED ON PHYSICAL MODELING , 1991 .
[79] Mohammad Abdul Alim,et al. Temperature-Dependent DC and Small-Signal Analysis of AlGaAs/InGaAs pHEMT for High-Frequency Applications , 2016, IEEE Transactions on Electron Devices.
[80] Anwar Jarndal. AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective , 2014 .
[81] Zlatica Marinkovic,et al. Temperature-dependent models of low-noise microwave transistors based on neural networks , 2005 .
[82] Dominique Schreurs,et al. Construction of behavioral models for microwave devices from time domain large-signal measurements to speed up high-level design simulations , 2003 .
[83] M. Pospieszalski. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .
[84] J. H. Qureshi,et al. LDMOS Technology for RF Power Amplifiers , 2012, IEEE Transactions on Microwave Theory and Techniques.
[85] Sam-Dong Kim,et al. Millimeter-Wave Small-Signal Model Using A Coplanar Waveguide De-Embedded Sub-Model for HEMT , 2014, IEEE Microwave and Wireless Components Letters.
[86] Bo Yan,et al. A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design , 2014 .
[87] Fabrizio Bonani,et al. Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications , 2003 .
[88] P. Roblin,et al. New Trends for the Nonlinear Measurement and Modeling of High-Power RF Transistors and Amplifiers With Memory Effects , 2012, IEEE Transactions on Microwave Theory and Techniques.
[89] Jean-Pierre Raskin,et al. Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs , 1997 .
[90] Valeria Vadala,et al. Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects , 2011 .