Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots Based Thin Film Transitor

The present work reports the ultra-violet (UV) and electrical characteristics of solution processed MoO2/ZnO Quantum Dot (QD) based thin film transistor, ZnO QDs thin films are deposited using low-cost solution processing over the Al2O3/p-Si substrates. A very thick layer of Al2O3 (250 nm) is deposited using e-beam evaporation (10-6 mbar). MoO2 is deposited using the thermal evaporation over the ZnO thin film and the achieved thickness is of 25nm. Top and bottom Al contacts were deposited using thermal evaporation and of 50nm and 80nm respectively. Device is characterized in the form of back gate ZnO Thin film transistor (TFT), illuminated from the front side. The UV detection property of the device is performed under the illumination of UV lamp (Puv = 650µW) with wavelength of 365nm. The results obtained with the Vds versus Ids plot shows the significant improvement in the drain current with UV exposure.

[1]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[2]  Satyabrata Jit,et al.  A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation , 2014 .

[3]  Bengt Nilsson,et al.  Field-effect transistors with thin ZnO as active layer for gas sensor applications , 2008 .

[4]  Zhong Lin Wang.  ZnO Nanowire and Nanobelt Platform for Nanotechnology , 2009 .

[5]  Ashutosh Tiwari,et al.  Fabrication of a tunable glucose biosensor based on zinc oxide/chitosan-graft-poly(vinyl alcohol) core-shell nanocomposite. , 2012, Talanta.

[6]  V. Klimov.  Nanocrystal quantum dots, second edition , 2010 .

[7]  P. Chakrabarti,et al.  Time-dependent degradation of Pt/ZnO nanoneedle rectifying contact based piezoelectric nanogenerator , 2011 .

[8]  Christopher B. Murray,et al.  Colloidal synthesis of nanocrystals and nanocrystal superlattices , 2001, IBM J. Res. Dev..

[9]  Daniel Hofstetter,et al.  ZnO Devices and Applications: A Review of Current Status and Future Prospects , 2010, Proceedings of the IEEE.

[10]  Satyabrata Jit,et al.  Ultraviolet Detection Characteristics of Pd/ n -ZnO Thin Film Schottky Photodiodes Grown on n -Si Substrates , 2013 .

[11]  Chong-Xin Shan,et al.  Highly Sensitive Ultraviolet Photodetectors Fabricated from ZnO Quantum Dots/Carbon Nanodots Hybrid Films , 2014, Scientific Reports.

[12]  Moungi G Bawendi,et al.  Improved current extraction from ZnO/PbS quantum dot heterojunction photovoltaics using a MoO3 interfacial layer. , 2011, Nano letters.

[13]  Wolfgang Kowalsky,et al.  Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films , 2009 .

[14]  Yicheng Lu,et al.  ZnO Schottky barriers and Ohmic contacts , 2011 .

[15]  Yoshiki Kinoshita,et al.  Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers , 2007 .

[16]  Philippe Guyot-Sionnest,et al.  Intraband spectroscopy and dynamics of colloidal semiconductor quantum dots , 2017 .

[17]  N. Ghobadi,et al.  Band gap determination using absorption spectrum fitting procedure , 2013, International Nano Letters.

[18]  Jinfeng Kang,et al.  Fabrication and characteristics of ZnO-based thin film transistors , 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

[19]  Benjamin J. Norris,et al.  ZnO-based transparent thin-film transistors , 2003 .

[20]  Yicheng Lu,et al.  ZnO thin film transistor immunosensor with high sensitivity and selectivity , 2011 .

[21]  Masakazu Aono,et al.  ZnO-Based Ultraviolet Photodetectors , 2010, Sensors.