论文信息 - 0.15µm Fully Depleted SOI for Mixed-Signal Applications up to 250°C: Are We Approaching the Limits of Device Scaling for High-Temperature Electronics ? - 字舞流文

0.15µm Fully Depleted SOI for Mixed-Signal Applications up to 250°C: Are We Approaching the Limits of Device Scaling for High-Temperature Electronics ?

Denis Flandre | Valeriya Kilchytska | Pierre Delatte | Laurent Vancaillie | F. Ichikawa | Hideaki Matsuhashi