论文信息 - Pseudomorphic InxGa1-xAs/InyAl1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy

Pseudomorphic InxGa1-xAs/InyAl1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy

We report on the optimization of InP-based InxGa1-xAs/InyAl1-yAs pseudomorphic high electron mobility transistor (PHEMT) structures to achieve the highest possible 2D electron gas density and mobility. Using our optimized growth conditions, high 2DEG concentration and mobility products have been obtained. The single-side-doped PHEMT structure with a (delta) -doping concentration of 6 by 1012 cm-2 gives a 2DEG sheet density of 3.93 by 1012 cm-2 and a top (delta) -doping concentration of 5 by 1012 cm-2 gives a 2DEG sheet density of 4.57 by 1012 cm-2 with a mobility of 10900 cm2/V.s. The structural properties of PHEMT structures are characterized by XRD measurements. Preliminary device results are also reported.

Soon Fatt Yoon | Geok Ing Ng | Hai Qun Zheng | K. Radhakrishnan

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