Structural characterization and modeling of damage accumulation in In implanted Si

Lattice disorder and dopant distribution in silicon implanted at room temperature with In ions have been characterized by cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering channeling, and secondary ion mass spectroscopy techniques. It is shown that full recoil Monte Carlo calculation in the binary collision approximation, including an empirical damage efficiency parameter varying with ion dose, can reasonably reproduce the disorder distributions extracted from ion-channeling spectra, under the assumption of defects as atoms randomly placed in a rigid lattice. The main features of the observed trend, such as, for instance, the threshold for amorphization and the width of the amorphized layer, are in good agreement with XTEM observations. Furthermore, the good agreement between calculated and experimental as-implanted In distributions shows that the dynamic evolution of dopant profiles is consistent with the simulated damage growth. The distributions of displaced atoms extra...

[1]  R S Pease,et al.  REVIEW ARTICLES: The Displacement of Atoms in Solids by Radiation , 1955 .

[2]  A. Benvenuti,et al.  Investigation on indium diffusion in silicon , 2002 .

[3]  G. Stingeder,et al.  Verification of models for the simulation of boron implantation into crystalline silicon , 1996 .

[4]  M. Bianconi,et al.  RBS-channeling spectra: simulation of as-implanted Si samples through an empirical formula for 〈100〉 axial dechanneling of He in silicon , 1994 .

[5]  P. Griffin,et al.  Indium transient enhanced diffusion , 1998 .

[6]  Daniel Mathiot,et al.  Ostwald ripening of end-of-range defects in silicon , 1998 .

[7]  L. Slifkin,et al.  Point Defects in Solids , 1972 .

[8]  Tiao-Yuan Huang,et al.  High performance 0.1 /spl mu/m dynamic threshold MOSFET using indium channel implantation , 2000 .

[9]  M. Caturla,et al.  Defect production in collision cascades in elemental semiconductors and fcc metals , 1998 .

[10]  G. Hobler,et al.  Amorphous pocket model for silicon based on molecular dynamics simulations , 2003 .

[11]  E. Weber,et al.  A systematic analysis of defects in ion-implanted silicon , 1988 .

[12]  E. Wendler,et al.  Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements , 1996 .

[13]  D. Ang,et al.  A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment , 2002 .

[14]  B. Davari,et al.  Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs , 1993, IEEE Electron Device Letters.

[15]  G. G. Bentini,et al.  Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra , 2000 .

[16]  H. Umimoto,et al.  Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon , 2000 .

[17]  T. Noda.  Evolution of end-of-range damage and transient enhanced diffusion of indium in silicon , 2002 .

[18]  A. Domenicucci,et al.  Transient Enhanced Diffusion and Dose Loss of Indium in Silicon , 1999 .

[19]  T. D. Rubia,et al.  Ion-beam processing of silicon at keV energies: A molecular-dynamics study. , 1996, Physical review. B, Condensed matter.

[20]  D. Thompson,et al.  Energy spikes in Si and Ge due to heavy ion bombardment , 1978 .

[21]  A. Claverie,et al.  TEM studies of the defects introduced by ion implantation in SiC , 1999 .

[22]  M. Bianconi,et al.  Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison , 1996 .

[23]  M. Bianconi,et al.  Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si , 1997 .

[24]  M. Bianconi,et al.  DYNAMIC MONTE CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION IMPLANTATION OF CRYSTALLINE SILICON , 1996 .

[25]  Indium segregation to dislocation loops induced by ion implantation damage in silicon , 2003 .

[26]  M. Bianconi,et al.  Damage profiles in high-energy As implanted Si , 2000 .

[27]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[28]  L. Colombo,et al.  Low-energy recoils in crystalline silicon: Quantum simulations , 2001 .