E-beam shot count estimation at 32 nm HP and beyond

Recent Low k1 era requires aggressive OPC technology with advanced lithography technology. The aggressive OPC contains the rounded pattern and a lot of assistant pattern which are the main source to increase the shot division. We have defined the shot complexity, which is defined by the ratio of number of shot between the interested pattern and the 1:1 L/S pattern. Based on shot complexity parameter, we have estimated the writing time as the device node decreases. We expect that the aggressive OPC and the high dose could generate severely the writing time issue in 32nm node era.