Fundamental scaling properties of electro-mechanical switches

We discuss the fundamental processes including electron conduction and adhesion of metallic contacts pertaining to the scaling of the performance metrics of nano-electro-mechanical switches. In particular, we show that under most circumstances, the switching energy is governed by the force that is needed in order to break the electrical contact when opening the switch. For an optimally designed parallel plate capacitor switch, the energy consumption does not depend on the actuation voltage. However, stray capacitances degrade the energy efficiency if a high operating voltage is chosen. The limit is of the order of 1V for an aggressively scaled Si device, for which an overall switching energy of the order of 150eV, a footprint area of 2500nm 2 and a switching time of 200ps are predicted. The scaling analysis also stipulates that materials with a low free electron density and high effective mass should be used for the electrical contact, which is counter-intuitive, as such materials are known to be poor conductors on the macroscopic scale.

[1]  Zhiya Dang,et al.  Three-dimensional silicon micromachining , 2012 .

[2]  G. Braunss L. D. Landau und E. M. Lifschitz, Lehrbuch der Theoretischen Physik, Band VII, Elastizitätstheorie. (Übers. a. d. Russ.). VIII + 183 S. m. 28 Abb. Berlin 1965. Akademie‐Verlag. Preis geb. 16,– M , 1968 .

[3]  P. Enoksson,et al.  CMOS considerations in nanoelectromechanical carbon nanotube-based switches , 2008, Nanotechnology.

[4]  Tsu-Jae King Liu,et al.  Design and reliability of a micro-relay technology for zero-standby-power digital logic applications , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[5]  Kaustav Banerjee,et al.  Impact of scaling on the performance and reliability degradation of metal-contacts in NEMS devices , 2011, 2011 International Reliability Physics Symposium.

[6]  Kaustav Banerjee,et al.  A new paradigm in the design of energy-efficient digital circuits using laterally-actuated double-gate NEMS , 2010, 2010 ACM/IEEE International Symposium on Low-Power Electronics and Design (ISLPED).

[7]  Kyriakos Komvopoulos,et al.  Electrical contact resistance theory for conductive rough surfaces , 2003 .

[8]  N. Sinha,et al.  Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches , 2009, Journal of Microelectromechanical Systems.

[9]  U. Landman,et al.  Atomistic mechanisms of adhesive contact formation and interfacial processes , 1992 .

[10]  Jan M. van Ruitenbeek,et al.  Quantum properties of atomic-sized conductors , 2002, cond-mat/0208239.

[11]  Pohl,et al.  Observation of metallic adhesion using the scanning tunneling microscope. , 1990, Physical review letters.

[12]  K. Amponsah,et al.  Near-kT switching-energy lateral NEMS switch , 2010, 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems.

[13]  U. Dürig,et al.  Study of yielding mechanics in nanometer-sized Au contacts , 1996 .

[14]  Vladimir Stojanovic,et al.  Integrated circuit design with NEM relays , 2008, ICCAD 2008.

[15]  Hossein Fariborzi,et al.  Design and demonstration of micro-electro-mechanical relay multipliers , 2011, IEEE Asian Solid-State Circuits Conference 2011.

[16]  R. Howe,et al.  Design Considerations for Complementary Nanoelectromechanical Logic Gates , 2007, 2007 IEEE International Electron Devices Meeting.

[17]  Steven L. Wolfley,et al.  A nanomechanical switch for integration with CMOS logic , 2008 .

[18]  Chengkuo Lee,et al.  A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage , 2012 .

[19]  N. Agraït,et al.  Metallic adhesion in atomic-size junctions. , 2004, Physical review letters.

[20]  R. Landauer,et al.  Generalized many-channel conductance formula with application to small rings. , 1985, Physical review. B, Condensed matter.

[21]  N. McGruer,et al.  A Review of Adhesion in an Ohmic Microswitch , 2010 .

[22]  Vieira,et al.  Atomic-sized metallic contacts: Mechanical properties and electronic transport. , 1996, Physical review letters.

[23]  Elad Alon,et al.  Demonstration of Integrated Micro-Electro-Mechanical Relay Circuits for VLSI Applications , 2011, IEEE Journal of Solid-State Circuits.

[24]  T. Kenny,et al.  What is the Young's Modulus of Silicon? , 2010, Journal of Microelectromechanical Systems.

[25]  Tsu-Jae King Liu,et al.  Design, Optimization, and Scaling of MEM Relays for Ultra-Low-Power Digital Logic , 2011, IEEE Transactions on Electron Devices.