Analysis of current injection efficiency of separate-confinement-heterostructure quantum-film lasers

Current injection efficiency, i.e. the proportion of current into the active region to total current, is analyzed for separate confinement heterostructure (SCH) quantum film lasers. It is shown that the current injection efficiency changes stepwise with the active layer thickness. and is larger for lower injected carrier density and deeper quantum well. Comparison is made between step-, parabolic-GRIN-, and linear-GRIN-SCH structures. The efficiency of linear-GRIN-SCH is the highest for the same well depth. Threshold current density is discussed for these SCH structures, taking into account the current injection efficiency and the optical loss due to the carrier leakage to the optical confinement layers. >

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