Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices

We present a new model for simulation of single-event effects in fully depleted silicon on insulator (FD-SOI) technology. The model is based on direct resolution of the drift-diffusion equations on a 1-D grid aligned with the source–channel–drain axis of the impacted MOSFETs. Our model is dynamically interfaced with a SPICE solver and shown to be both computationally efficient and in good correlation with 3-D technology computer-aided design (TCAD) radiation simulations. This allows us to embed the module in our soft-error rate simulation platform, enabling projections on logic cells in 28-nm FD-SOI.

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