论文信息 - Fast switching and long retention Fe-O ReRAM and its switching mechanism

Fast switching and long retention Fe-O ReRAM and its switching mechanism

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe3O4 and y-Fe2O3. Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.

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