Power dissipation of CMOS ASICs

High levels of power dissipation in CMOS ASICs are a result of high speed and complexity which exacerbates numerous design issues due to elevated junction temperatures. A method of calculating total power dissipation, as viewed from the gate level in an ASIC design methodology is presented and the effects of power dissipation are examined. Techniques for reducing power dissipation are described and other design and analysis issues are considered.<<ETX>>

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