Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system

We have successfully grown and characterized [Fe/Tb]10/Fe(001)/F57e(001)/MgO(001) multilayer contacts on a GaAs-based light emitting diode. Using F57e conversion-electron Mossbauer spectroscopy at room temperature (RT) and at 4.2 K, we provide atomistic proof of large perpendicular Fe spin components in zero external field at and below RT at the F57e(001)/MgO(001) interface. Further, indirect evidence of large interfacial Fe atomic moments is provided. Our contacts serve as a prototype spin aligner for remanent electrical spin injection at RT.

[1]  N. Sato.  Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure , 1986 .

[2]  C. Dufour,et al.  Interface and magnetic anisotropy in Tb/Fe multilayers , 1991 .

[3]  F. Zavaliche,et al.  Single-crystal magnetotunnel junctions , 2001 .

[4]  F. Klose,et al.  Fe spin structure in Tb/Fe multilayers , 2000 .

[5]  S. Honda,et al.  Magnetization characteristics and curie temperature of Y/Fe and Tb/Fe multilayers , 1994 .

[6]  S. Sarma,et al.  Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.

[7]  B. Jonker,et al.  Interface magnetization reversal and anisotropy in Fe/AlGaAs(001). , 2005, Physical review letters.

[8]  A. Wieck,et al.  Preparation and characterization of epitaxial Fe(001) thin films on GaAs(001)-based LED for spin injection , 2005 .

[9]  Dirk Reuter,et al.  Electron spin injection into GaAs from ferromagnetic contacts in remanence , 2005 .

[10]  Aubrey T. Hanbicki,et al.  Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor , 2002 .

[11]  K. Ploog,et al.  Room-temperature spin injection from Fe into GaAs. , 2001, Physical review letters.

[12]  S. S. Hanna,et al.  Mössbauer Effect in Metallic Iron , 1962 .

[13]  R M Macfarlane,et al.  Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100). , 2005, Physical review letters.

[14]  A. Enders,et al.  Growth, structure, electronic, and magnetic properties of MgO/Fe(001) bilayers and Fe/MgO/Fe(001) trilayers , 2001 .

[15]  Dirk Reuter,et al.  Room temperature electrical spin injection in remanence , 2008 .

[16]  Stuart A. Wolf,et al.  Spintronics : A Spin-Based Electronics Vision for the Future , 2009 .

[17]  Jong-Wan Park,et al.  Stoichiometry dependency of the firing and sustain voltage properties of MgO thin films for alternating current plasma display panels , 1999 .

[18]  O.M.J. van 't Erve,et al.  Comparison of Fe/Schottky and Fe/Al2O3 tunnel barrier contacts for electrical spin injection into GaAs , 2004 .

[19]  A. Balogh,et al.  The interaction of Fe on MgO(1 0 0) surfaces , 2009 .

[20]  M. Hofmann,et al.  Electrical detection of photoinduced spins both at room temperature and in remanence , 2008 .

[21]  R. Brand,et al.  Dependence of the magnetization reversal of Fe/Tb multilayers on layer thickness and growth temperature , 1999 .

[22]  Spin injection from perpendicular magnetized ferromagnetic $δ$-MnGa into (Al,Ga)As heterostructures , 2006, cond-mat/0606013.

[23]  Asawin Sinsarp,et al.  Electrical Spin Injection from Out-of-Plane Magnetized FePt/MgO Tunneling Junction into GaAs at Room Temperature , 2006 .