Plasmon mode coupling and depolarization shifts in AlGaAs/GaAs asymmetric step quantum wells with and without electric field

We investigate the plasmon mode coupling and depolarization shifts in AlGaAs/GaAs asymmetric step quantum wells (ASQWs) of the two-subband model with the Bohm–Pine’s random-phase approximation with and without an applied electric field. By adjusting the well geometry parameters and material composition systematically, various characteristics of plasmons in ASQWs are found for different asymmetric cases. We find that (i) the intersubband plasmon has a large negative dispersion in long wavelength limit; (ii) the step width related depolarization shift depends on the number of subbands in the deep well; and (iii) the influence of electric field effect on depolarization shift and the coupling of the two plasmon modes is quite asymmetric with its minimum at +8 kV/cm by changing the electrical field and the ASQW structure parameters. The coupling and decoupling of the intersubband and intrasubband plasmon modes can be realized by adjusting the polarity and the strength of the external electric field and changing the ASQW structure parameters.

[1]  H. Ahn,et al.  Optical properties of plasmons in a multiple quantum well semiconductor superlattice under electric and magnetic fields , 2014 .

[2]  A. N. Borges,et al.  Polaronic effects on the collective excitation in a GaAs parabolic quantum wire , 2014 .

[3]  A. Bertoni,et al.  Symmetries in the collective excitations of an electron gas in core-shell nanowires , 2014, 1402.6116.

[4]  H. Ahn,et al.  Optical property and collective excitation of plasmon in a multiple-quantum-well superlattice in electric field , 2012 .

[5]  M. Kushwaha Inelastic electron and light scattering from the elementary electronic excitations in quantum wells: Zero magnetic field , 2012, 1206.0096.

[6]  V. Bisti Interaction of intersubband and plasmon excitations in asymmetric semiconductor bilayers , 2011 .

[7]  Bowei Xu,et al.  Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate , 2011 .

[8]  M. Amann,et al.  Broad gain bandwidth injectorless quantum-cascade lasers with a step well design , 2011 .

[9]  Yi-xin Lin,et al.  Doping dependence of electron populations in optically pumped step quantum well structures , 2011 .

[10]  Wei Zhao,et al.  Intersubband optical absorption in a step asymmetric semiconductor quantum well driven by a terahertz field , 2009 .

[11]  R. Terazzi,et al.  Low threshold step well quantum cascade laser emitting at 3 THz , 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

[12]  F. Julien,et al.  Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells , 2006 .

[13]  B. Gu,et al.  Effects of tunneling coupling on plasmon modes in asymmetric double-quantum-well structures , 2001 .

[14]  B. Gu,et al.  Effects of interwell coupling on plasmon modes in symmetric double square quantum well structures , 2001 .

[15]  E. Li,et al.  Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures , 2000 .

[16]  H. Rutt,et al.  Design of intersubband quantum well far-infrared lasers , 1997 .

[17]  West,et al.  Absence of spin-density excitations in quasi two-dimensional electron systems. , 1994, Physical review letters.

[18]  Kang L. Wang,et al.  Observation of large oscillator strengths for both 1→2 and 1→3 intersubband transitions of step quantum wells , 1990 .

[19]  Jain,et al.  Elementary electronic excitations in a quasi-two-dimensional electron gas. , 1987, Physical review. B, Condensed matter.

[20]  A. Tselis,et al.  Theory of collective excitations in semiconductor superlattice structures , 1984 .