论文信息 - Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications - 字舞流文

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

P. Friedrichs | D. Stephani | R. Rupp | D. Peters | R. Schörner | A. Wiedenhofer | A. Wiedenhofer