Mobility Degradation Analysis for La2O3 nMISFET

Al/La 2 O 3 /SiO 2 /p-Si nMOSFET with various thicknesses of the La 2 O 3 layer and the SiO2 interfacial layer (IL) were fabricated. We discussed mobility degradation caused by fixed charge and trapped charge at the La 2 O 3 /SiO 2 interface.