论文信息 - InGaN micro-LED-pillar as the building block for high brightness emitters

InGaN micro-LED-pillar as the building block for high brightness emitters

We confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D <; 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter.

Yang Yang | Tien Khee Ng | Boon S. Ooi | Chao Shen | Dongkyu Cha

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