论文信息 - A 60GHz direct-conversion transmitter in 65nm CMOS technology

A 60GHz direct-conversion transmitter in 65nm CMOS technology

This paper presents a 60 GHz direct-conversion transmitter in 65 nm CMOS technology. The power amplifier consists of 4-stage transistors. The circuit model of de-coupling capacitor is built as a transmission line to consider the physical length. In the measurement results, the conversion gain is above 9.6dB at 58–65GHz band, and the 1 dB compression point is 1.6 dBm with 60 GHz LO frequency and 1 dB LO power.

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